1.At the component level, polysilicon has long been used as the conducting gate material in MOSFET and CMOS processing technologies.2.The deposition of polycrystalline silicon on plastic substrates...
DESCRIPTION
1.At the component level, polysilicon has long been used as the conducting gate material in MOSFET and CMOS processing technologies.2.The deposition of polycrystalline silicon on plastic substrates is motivated by the desire to be able to manufacture digital displays on flexible screens.
Silicon Metal Grade | chemical composition | ||||
Si (%) | Impurities(%) ≤ | ||||
Fe | AI | Ca | P | ||
1501 | 99.69 | 0.15 | 0.15 | 0.01 |
0.004 |
1502 | 99.68 | 0.15 | 0.15 | 0.02 | |
1101 | 99.79 | 0.1 | 0.1 | 0.01 | |
2202 | 99.58 | 0.2 | 0.2 | 0.02 | |
2502 | 99.48 | 0.25 | 0.25 | 0.02 | |
3303 | 99.37 | 0.3 | 0.3 | 0.03 | |
411 | 99.4 | 0.4 | 0.1 | 0.1 | |
421 | 99.3 | 0.4 | 0.2 | 0.1 | |
441 | 99.1 | 0.4 | 0.4 | 0.1 | |
551 | 98.9 | 0.5 | 0.5 | 0.1 | |
553 | 98.7 | 0.5 | 0.5 | 0.3 |
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